UltraView-2P-MK I Two-Photon Photoluminescence Inspection System for Wide-Bandgap Semiconductors | Vibronix-Zhendian (Suzhou) Technology Co., Ltd.

Lateral resolution reaches 0.4 um with a 60X water-immersion objective, while axial resolution is about 1 um. This enables clear identification of micron-scale and even nanoscale defects such as dislocations and impurities in silicon carbide. By combining 3D laser focal scanning with Z-axis stage movement, the system can achieve volumetric imaging beyond 30 um in depth and directly reveal internal defect trajectories, such as dislocation paths at the interface between silicon carbide epitaxial layers and substrates.

Using near-infrared excitation wavelengths, the system is less affected by scattering in highly scattering samples such as silicon carbide epitaxial layers, delivering penetration depth far superior to visible-light single-photon imaging. A femtosecond pulsed laser with pulse width <=200 fs provides high peak power but low average power, with typical excitation power of 125-200 mW, minimizing sample damage and enabling repeat inspection of the same area.

Broadband reflective scanning covers a spectral range of 0.4-20 um and can be paired with multiple laser wavelengths to match different sample emission characteristics. Beyond intensity imaging, the system can incorporate spectral analysis, such as distinguishing emission-peak differences between TSD and TED dislocations in silicon carbide, as well as transient-signal detection such as fluorescence lifetime, providing physical and chemical information about defects.